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参数资料
| 型号： | MMDT2227 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-363, 6 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 30K |
| 代理商： | MMDT2227 |
DS30122 Rev. 2P-1
1 of 3
MMDT2227
NEW
PRODUCT
MMDT2227
COMPLEMENTARY NPN / PNP SMALL
SIGNAL SURFACE MOUNT TRANSISTOR
Complementary Pair
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
One 2222A-Type NPN,
One 2907A-Type PNP
Ideal for Low Power Amplification and
Switching
Characteristic
Symbol
NPN2222A
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
600
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
625
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings, NPN2222A Section
@ TA = 25
°C unless otherwise specified
A
M
J
L
F
D
B C
H
K
KXX
C
2
B
1
E
1
E
2
B
2
C
1
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K27
Weight: 0.006 grams (approx.)
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Characteristic
Symbol
PNP2907A
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-600
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
625
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings, PNP2907A Section
@ TA = 25
°C unless otherwise specified
Note: E1, B1, and C1 = PNP2907A Section,
E2, B2, and C2 = NPN2222A Section.
Type marking indicates orientation.
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2227_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227-7 | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227-7-F | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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