- 您现在的位置：买卖IC网 > PDF目录95978 > MMDT2227 (LITE-ON SEMICONDUCTOR CORP) 600 mA, 40 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMDT2227 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-363, 6 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 30K |
| 代理商： | MMDT2227 |
DS30122 Rev. 2P-1
3 of 3
MMDT2227
NEW
PRODUCT
Electrical Characteristics, PNP2907A Section
@ TA = 25
°C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
-60
V
IC = -10
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
A, IC = 0
Collector Cutoff Current
ICBO
-10
nA
A
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125
°C
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
75
100
50
300
IC = -100A, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base- Emitter Saturation Voltage
VBE(SAT)
-1.3
-2.6
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
ton
45
ns
IC = -150mA, VCC = -30V,
IB1= -15mA
Delay Time
td
10
ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time
tr
40
ns
相关PDF资料 |
PDF描述 |
|---|---|
| MMDT2227 | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2907A-TP | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2907A | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2907AT/R13 | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2907AT/R7 | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2227_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227-7 | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227-7-F | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。