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参数资料
| 型号： | MMDT2227 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-363, 6 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 30K |
| 代理商： | MMDT2227 |
DS30122 Rev. 2P-1
2 of 3
MMDT2227
NEW
PRODUCT
Electrical Characteristics, NPN2222A Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
A, IC = 0
Collector Cutoff Current
ICBO
10
nA
A
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150
°C
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
35
50
75
100
40
50
35
300
IC = 100
A, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55
°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = 10V, IC = 100
A,
RS = 1.0k
, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
25
ns
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2227_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227-7 | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227-7-F | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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