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参数资料
| 型号： | MMDT3906V |
| 厂商： | Diodes Inc. |
| 英文描述： | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 双进步党小信号晶体管表面贴装 |
| 文件页数： | 3/4页 |
| 文件大小： | 80K |
| 代理商： | MMDT3906V |
DS30467 Rev. 6 - 2
3 of 4
MMDT3906V
www.diodes.com
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
V
,
S
B
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
0.01
0.1
10
1
1
10
100
1000
V
,
S
C
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h
,
F
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
T = +25°C
T = 125°C
V
= 1.0V
CE
1
100
10
0.1
1
10
100
C
,
C
,
I
O
V
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
, COLLECTOR-BASE VOLTAGE (V)
CB
f = 1MHz
Cibo
Cobo
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1, Derating Curve - Total
°
P
d
N
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| MMDT3906V-7-L | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT3906V_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors |
| MMDT3906V-7 | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3906V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.2A 6PIN SOT-563 - Tape and Reel |
| MMDT3906V-7-L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3906VC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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