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参数资料
| 型号： | MMDT5401 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 246K |
| 代理商： | MMDT5401 |
MMDT5401
PNP/PNP Multi-Chip Transistor
FEATURES
Ideal for Medium Power Amplification and Switching
Complementary NPN Type Available(MMDT 5551)
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-100A,IE=0
VCBO
-160
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-150
V
Emitter-base breakdown voltage
IE=-10A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-120V,IE=0
ICBO
-0.05
uA
Emitter-base cut-off current
VEB=-3V,IC=0
IEBO
-0.05
uA
VCE=-5V,IC=-1mA
hFE1
50
V
VCE=-5V,IC=-10mA
hFE2
100
300
V
DC current gain
VCE=-5V,IC=-50mA
hFE43
50
V
IC=-10mA,IB=-1mA
VCE(sat)1
-0.2
V
Collector-emitter saturation voltage
IC=-50mA,IB=-5mA
VCE(sat)2
-0.5
V
IC=-10mA,IB=-1mA
VBE(sat)1
-1
V
Base-emitter saturation voltage
IC=-50mA,IB=-5mA
VBE(sat)2
-1
V
Transition frequency
VCE=-10V,IC=-0mA,
f=100MHz
fT
100
MHz
Collector output capacitance
VCB=-10V,IE=0,f=1MHz
Cob
6
pF
Noise Figure
VCE= -5.0V, IC= -200A,
RS= 10 ,f = 1.0kHz
NF
8
dB
REV. 1, Oct-2010, KSTR08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT5401_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5401_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
| MMDT5401_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5401-7 | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5401-7-F | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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