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参数资料
| 型号： | MMFT2955ET3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 1/10页 |
| 文件大小： | 178K |
| 代理商： | MMFT2955ET3 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Field Effect Transistor
P–Channel Enhancement Mode
Silicon Gate TMOS E–FET
t
SOT–223 for Surface Mount
This advanced E–FET is a TMOS medium power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. The device is housed in the
SOT–223 package which is designed for medium power surface
mount applications.
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.3 max
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
Use MMFT2955ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
60
Vdc
Gate–to–Source Voltage — Continuous
VGS
±15
Vdc
Drain Current — Continuous
Drain Current — Pulsed
ID
IDM
1.2
4.8
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD(1)
0.8
6.4
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 )
EAS
108
mJ
DEVICE MARKING
2955
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θJA
156
°C/W
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Order this document
by MMFT2955E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
D
S
G
MMFT2955E
TMOS MEDIUM POWER FET
1.2 AMP
60 VOLTS
RDS(on) = 0.3 OHM
Motorola Preferred Device
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT2955ET1 | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT6661 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT2406 | 0.7 A, 240 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| MMFT107 | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMIX1T550N055T2 | 550 A, 55 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2N02EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
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