- 您现在的位置：买卖IC网 > PDF目录97607 > MMFT2955ET3 (MOTOROLA INC) 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA PDF资料下载
参数资料
| 型号： | MMFT2955ET3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 4/10页 |
| 文件大小： | 178K |
| 代理商： | MMFT2955ET3 |
MMFT2955E
3
Motorola TMOS Power MOSFET Transistor Device Data
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
Figure 1. On Region Characteristics
Figure 2. Gate–Threshold Voltage Variation
With Temperature
Figure 3. Transfer Characteristics
Figure 4. On–Resistance versus Drain Current
Figure 5. On–Resistance versus
Gate–to–Source Voltage
Figure 6. On–Resistance versus
Junction Temperature
10
8
6
4
2
0
10
8
6
4
2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
20 V
15 V
10 V
8 V
7 V
6 V
5 V
VGS = 4 V
V
GS(th)
,GA
TE
THRESHOLD
VOL
TS
(NORMALIZE
D
1.1
–50
TJ, JUNCTION TEMPERATURE (°C)
0.7
0.8
0.9
1
0
50
100
150
VDS = VGS
ID = 1 mA
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
6
4
2
0
10
8
6
4
2
0
VDS = 10 V
–55
°C
25
°C
100
°C
–55
°C
25
°C
100
°C
–55
°C
ID, DRAIN CURRENT (AMPS)
0.6
0
0.5
0.4
0.3
0.2
0.1
0
24
6
8
VGS = 10 V
100
°C
25
°C
–55
°C
0.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4
0.4
0.2
0.1
0
0.3
710
13
16
19
TJ = 25°C
ID = 1.2 A
0.5
TJ, JUNCTION TEMPERATURE (°C)
0.4
0.2
0.1
0
0.3
– 50
0
50
100
150
VGS = 10 V
ID = 1.2 A
1.2
TJ = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT2955ET1 | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT6661 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT2406 | 0.7 A, 240 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| MMFT107 | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMIX1T550N055T2 | 550 A, 55 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2N02EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
发布紧急采购，3分钟左右您将得到回复。