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参数资料
| 型号： | MMFT2N25ET3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 166K |
| 代理商： | MMFT2N25ET3 |
MMFT2N25E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
Temperature Coefficient (Positive)
BVDSS
250
—
324
—
Vdc
V/°C
Zero Gate Voltage Drain Current
(VDS = 250 V, VGS = 0)
(VDS = 250 V, VGS = 0, TJ = 125°C)
IDSS
—
10
100
μAdc
GateBody Leakage Current
(VGS = ±20 V, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
5.7
4.0
—
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 V, ID = 1.0 Adc)
RDS(on)
—
2.1
3.5
Ohms
DraintoSource OnVoltage
(VGS = 10 V, ID = 2.0 A)
(VGS = 10 V, ID = 1.0 A, TJ = 125°C)
VDS(on)
—
8.40
7.35
Vdc
Forward Transconductance
(VDS = 8.0 V, ID = 2.0 Adc)
gFS
0.44
1.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V,
VGS = 0,
f = 1.0 MHz)
Ciss
—
137
190
pF
Output Capacitance
Coss
—
30
40
Transfer Capacitance
Crss
—
7.0
10
SWITCHING CHARACTERISTICS (1)
TurnOn Delay Time
(VDS = 125 V,
ID = 2.0 A,
RG = 9.1 Ohms,
VGS = 10 V)
td(on)
—
9.2
20
ns
Rise Time
tr
—
6.6
10
TurnOff Delay Time
td(off)
—
13
30
Fall Time
tf
—
8.5
20
Gate Charge
(VDS = 200 V,
ID = 2.0 A,
VGS = 10 V)
QT
—
4.7
10
nC
Q1
—
1.3
—
Q2
—
3.2
—
Q3
—
2.3
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
IS = 2.0 A, VGS = 0 V
VSD
—
0.94
2.0
Vdc
IS = 2.0 A, VGS = 0 V, TJ = 125°C
VSD
—
0.83
—
Reverse Recovery Time
(IS = 2.0 A,
dlS/dt = 100 A/μs)
trr
—
104
—
nS
ta
—
63
—
tb
—
41
—
Reverse Recovery Stored Charge
qrr
—
0.365
—
mC
(1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%.
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