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参数资料
| 型号： | MMFT2N25ET3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 166K |
| 代理商： | MMFT2N25ET3 |
MMFT2N25E
http://onsemi.com
3
9.0 V
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation versus
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
20
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
6.0
7
3.0
2.0
1.0
0.5
0
3.0
4.0
0
ID, DRAIN CURRENT (AMPS)
7.0
4.0
3.0
2.0
1.0
0
ID, DRAIN CURRENT (AMPS)
1.0
0
6.0
4.0
3.0
2.0
1.0
0
1.5
25
50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0.5
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
50
0
100
10
1.0
100
0
I D
,DRAIN
CURRENT
(AMPS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0.5
0
10
5.0
15
TJ = 25°C
6.5
7.0
3.5
4.0
4.5
5.0
5.5
1.5
2.5
3.0
1.0
2.0
2.5
3.0
3.5
4
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
75
100
2.5
200
2
150
I DSS
,LEAKAGE
(nA)
4.0
3.5
I D
,DRAIN
CURRENT
(AMPS)
3.5
4.0
0.5
5.0
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
5.0
6.0
125
150
VGS = 10 V
5.0 V
6.0 V
7.0 V
8.0 V
VDS ≥ 10 V
55 °C
25°C
TJ = 100°C
VGS = 10 V
TJ = 100°C
55 °C
25°C
VGS = 10 V
15 V
TJ = 25°C
VGS = 0 V
100°C
TJ = 125°C
VGS = 10 V
ID = 1.0 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055V | 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC SOT-223 |
| MMFT3055VL | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-223 |
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