- 您现在的位置：买卖IC网 > PDF目录262944 > MMFT2N25ET3 (ON SEMICONDUCTOR) 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA PDF资料下载
参数资料
| 型号： | MMFT2N25ET3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 166K |
| 代理商： | MMFT2N25ET3 |
MMFT2N25E
http://onsemi.com
4
td(on)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
25
10
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
300
250
200
150
100
QG, TOTAL GATE CHARGE (nC)
6.0
10
0
6.0
2.0
0
100
RG, GATE RESISTANCE (OHMS)
100
10
1.0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.5
0.3
2.0
1.0
0.5
0
0.6
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
25
60
10
0
75
1.0
C,
CAP
ACIT
ANCE
(pF)
I S
,SOURCE
CURRENT
(AMPS)
50
0
10
5.0
15
TJ = 25°C
8.0
2.0
4.0
8.0
10
1.0
10
0.7
0.8
0.9
1
,DRAIN
CURRENT
(AMPS)
I D
10
100
10
125
1
100
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
350
V GS
,GA
TETOSOURCE
VOL
TAGE
(VOL
TS)
12
0.4
1.5
t,TIME
(ns)
1000
020
5.0
VGS = 0 V
VDS = 0 V
Ciss
Crss
Ciss
Crss
Coss
TJ = 25°C
ID = 2.0 A
Q3
Q2
Q1
QT
VDS
VGS
TJ = 25°C
ID = 2.0 A
VDD = 125 V
VGS = 10 V
td(off)
tf
tr
TJ = 25°C
VGS = 0 V
VGS = 20 V
SINGLE PULSE
TC = 25°C
100 ms
1.0 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
AV
ALANCHE
ENERGY
(mJ)
20
30
40
50
ID = 2.0 A
250
200
150
100
50
0
VDS
VGS
相关PDF资料 |
PDF描述 |
|---|---|
| MOD1006S | 20 A, 600 V, N-CHANNEL IGBT |
| MMPQ3904R2 | 200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSH11/D28Z-J22Z | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MG300H1UL1 | 300 A, 550 V, NPN, Si, POWER TRANSISTOR |
| MPSA92/D89Z-J25Z | 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055V | 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC SOT-223 |
| MMFT3055VL | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-223 |
发布紧急采购，3分钟左右您将得到回复。