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参数资料
| 型号： | MMFT3055EL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| 中文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 236K |
| 代理商： | MMFT3055EL |
3
Motorola TMOS Power MOSFET Transistor Device Data
R
R
R
Figure 1. On Region Characteristics
D
I
0
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
6.0 V
5.5 V
4.5 V
5.0 V
4.0 V
3.5 V
3.0 V
VGS = 2.5 V
G
V
,
Figure 2. Gate–Threshold Voltage Variation
With Temperature
1.2
1.1
1.0
0.9
0.8
0.7
–50
0
50
100
150
TJ, JUNCTION TEMP (
°
C)
(
Figure 3. Transfer Characteristics
D
I
0
2.0
4.0
6.0
7.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = –55
°
C
25
°
C
Figure 4. On–Resistance versus Drain Current
0
1.0
2.0
3.0
4.0
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
2.0
3.0
4.0
5.0
6.0
7.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
ID = 1.5 A
8.0
0.1
0.2
0.3
0.4
0.5
0
Figure 6. On–Resistance versus
Junction Temperature
0.4
0.3
0.2
0.1
0
–50
0
50
100
150
TJ, JUNCTION TEMP (
°
C)
VGS = 5 V
ID = 1.5 A
0
0.05
0.10
0.15
0.20
0.25
0.30
TJ = 100
°
C
55
°
C
25
°
C
VDS = 8 V
VGS = 5 V
VDS = VGS
ID = 1.0 mA
10
8.0
6.0
4.0
2.0
0
10
8.0
6.0
4.0
2.0
0
100
°
C
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| MMFT3055VL | TMOS POWER FET 1.5 AMPERES 60 VOLT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055V | 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC SOT-223 |
| MMFT3055VL | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-223 |
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
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