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参数资料
| 型号： | MMFT3055V |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 1.7 AMPERES 60 VOLTS |
| 中文描述： | TMOS是功率场效应晶体管1.7安培60伏特 |
| 文件页数： | 1/4页 |
| 文件大小： | 91K |
| 代理商： | MMFT3055V |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS E–FET
Available in 12 mm Tape & Reel
Use MMFT3055VT1 to order the 7 inch/1000 unit reel
Use MMFT3055VT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage
– Non–repetitive (tp
≤
10 ms)
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
Total PD @ TA = 25
°
C mounted on 1” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25
°
C mounted on 0.70” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25
°
C mounted on min. Drain pad on FR–4 bd material
Derate above 25
°
C
Operating and Storage Temperature Range
60
Vdc
±
20
±
25
Vdc
Vpk
1.7
1.4
6.0
Adc
Apk
2.0
1.7
0.9
6.3
Watts
mW/
°
C
°
C
mJ
TJ, Tstg
EAS
–55 to 175
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction to Ambient on 1” sq. Drain pad on FR–4 bd material
– Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material
– Junction to Ambient on min. Drain pad on FR–4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
58
R
θ
JA
R
θ
JA
R
θ
JA
TL
70
88
159
°
C/W
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MMFT3055V/D
SEMICONDUCTOR TECHNICAL DATA
TM
TMOS POWER FET
1.7 AMPERES
60 VOLTS
RDS(on) = 0.130 OHM
D
S
G
CASE 318E–04, Style 3
TO–261AA
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055VL | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-223 |
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT5P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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