- 您现在的位置：买卖IC网 > PDF目录95979 > MMFT3055VLT1 (MOTOROLA INC) 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA PDF资料下载
参数资料
| 型号： | MMFT3055VLT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 8/10页 |
| 文件大小： | 224K |
| 代理商： | MMFT3055VLT1 |
MMFT3055VL
7
Motorola TMOS Power MOSFET Transistor Device Data
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
SOT–223
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
SOT–223 POWER DISSIPATION
The power dissipation of the SOT–223 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
R
θJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the values
provided on the data sheet for the SOT–223 package, PD can
be calculated as follows:
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 943 milliwatts.
PD =
175
°C – 25°C
159
°C/W
= 943 milliwatts
The 159
°C/W for the SOT–223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 943 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–223 package. One is to increase the area of the
drain pad. By increasing the area of the drain pad, the power
dissipation can be increased. Although one can almost double
the power dissipation with this method, one will be giving up
area on the printed circuit board which can defeat the purpose
of using surface mount technology. A graph of R
θJA versus
drain pad area is shown in Figure 17.
0.8 Watts
1.25 Watts*
1.5 Watts
R
,
Thermal
Resistance,
Junction
to
Ambient
(
C/W)
θ JA
°
A, Area (square inches)
0.0
0.2
0.4
0.6
0.8
1.0
160
140
120
100
80
Figure 15. Thermal Resistance versus Drain Pad
Area for the SOT–223 Package (Typical)
Board Material = 0.0625
″
G–10/FR–4, 2 oz Copper
TA = 25°C
*Mounted on the DPAK footprint
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT3055VT1G | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT3 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT6661T1 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT5P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。