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参数资料
| 型号： | MMG05N60DT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 0.5 A, 600 V, N-CHANNEL IGBT, TO-261A |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 157K |
| 代理商： | MMG05N60DT3 |
1
Motorola IGBT Device Data
Designer’s
Data Sheet
Insulated Gate Bipolar Transistor
NChannel EnhancementMode Silicon Gate
This IGBT contains a builtin free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.
BuiltIn Free Wheeling Diode
BuiltIn Gate Protection Zener Diodes
Industry Standard Package (SOT223)
High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/
ms
Robust High Voltage Termination
Robust TurnOff SOA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
600
Vdc
CollectorGate Voltage (RGE = 1.0 M)
VCGR
600
Vdc
GateEmitter Voltage — Continuous
VCGR
± 15
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
0.5
0.3
2.0
Adc
Total Device Dissipation @ TC = 25°C
PD
1.0
Watt
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
°C
Thermal Resistance — Junction to Case IGBT
Thermal Resistance — Junction to Ambient
RθJC
RθJA
30
150
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
260
°C
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse DraintoSource Avalanche
Energy Starting @ TC = 25°C
Energy Starting @ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W
EAS
125
40
mJ
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV XXX
Order this document
by MMG05N60D/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMG05N60D
IGBT
0.5 A @ 25
°C
600 V
CASE 318E04
STYLE 13
TO261A
1
2
3
4
1 = G
2 = 4 = C
3 = E
C
E
G
Motorola, Inc. 1998
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