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参数资料
| 型号： | MMG05N60DT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 0.5 A, 600 V, N-CHANNEL IGBT, TO-261A |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 157K |
| 代理商： | MMG05N60DT3 |
MMG05N60D
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
—
680
0.7
—
Vdc
V/
°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
ICES
—
0.1
5.0
50
Adc
GateBody Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)
IGES
—
10
100
mAdc
ON CHARACTERISTICS
CollectortoEmitter OnState Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
VCE(on)
—
1.6
1.5
2.0
—
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
3.5
—
6.0
—
Vdc
mV/
°C
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
gfe
0.3
0.42
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
20 Vd
V
0Vd
Cies
—
75
100
pF
Output Capacitance
(VCE = 20 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
—
11
20
Transfer Capacitance
f = 1.0 MHz)
Cres
—
1.6
5.0
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)
VFEC
—
5.0
5.2
2.3
6.0
—
3.0
—
Vdc
Reverse Recovery Time @ TC = 25°C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
trr
—
150
—
ns
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
QRR
—
35
—
mC
SWITCHING CHARACTERISTICS (1)
TurnOff Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V
15 Vd
L
3 0
H R
25
td(off)
—
28
—
ns
Fall Time
( CC
, C
,
VGE = 15 Vdc, L = 3.0 mH, RG = 25 ,
TC = 25°C, dV/dt = 1000 V/ms)
tf
—
150
—
TurnOff Switching Loss
TC = 25°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Eoff
—
3.25
4.25
mJ
TurnOff Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V
15 Vd
L
3 0
H R
25
td(off)
—
21
—
ns
Fall Time
( CC
, C
,
VGE = 15 Vdc, L = 3.0 mH, RG = 25 ,
TC = 125°C, dV/dt = 1000 V/ms)
tf
—
280
—
TurnOff Switching Loss
TC = 125°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Eoff
—
8.0
10
mJ
Gate Charge
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
QT
—
6.4
—
nC
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
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