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参数资料
| 型号： | MMJT350T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Bipolar Power Transistors |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封装： | PLASTIC, CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 57K |
| 代理商： | MMJT350T1 |
MMJT350T1
http://onsemi.com
3
V
θ
°
I
C
, COLLECTOR CURRENT (mA)
h
200
7.0
20
5.0
50
30
10
10
50
100
30
25
°
C
T
J
= 150
°
C
55
°
C
Figure 1. DC Current Gain
100
20
70
200
500
300
70
V
CE
= 2.0 V
V
CC
= 10 V
Figure 2. “On” Voltages
1.0
I
C
, COLLECTOR CURRENT (mA)
0.8
0.2
0
T
J
= 25
°
C
V
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
0.6
0.4
V
CE(sat)
7.0
20
5.0
10
50
100
30
200
500
300
70
I
C
/I
B
= 10
I
C
/I
B
= 5.0
1000
700
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
70
50
300
10
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
SECOND BREAKDOWN LIMITED
Figure 3. ActiveRegion Safe Operating Area
1.0ms
dc
200
100
50
20
T
J
= 150
°
C
I
100
300
500
30
100 s
400
30
70
200
20
500 s
+1.2
I
C
, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
50
30
10
5.0
500
7.0
20
+0.8
+0.4
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
100
200 300
*APPLIES FOR I
C
/I
B
< h
FE/4
*
VC
for V
CE(sat)
VB
for V
BE
+100
°
C to +150
°
C
+25
°
C to +100
°
C
55
°
C to +25
°
C
+25
°
C to +150
°
C
55
°
C to +25
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 5. Power Derating
150
25
T, TEMPERATURE (
°
C)
4.0
3.0
2.0
1.0
0
P
D
50
,
75
100
125
T
A
T
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMJT350T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon |
| MMJT350T1G | 功能描述:两极晶体管 - BJT 0.5A 30V 2.75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMJT9410 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon |
| MMJT9410G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon |
| MMJT9410T1 | 功能描述:两极晶体管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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