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参数资料
| 型号： | MMPQ2222A |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOIC-16 |
| 文件页数： | 2/2页 |
| 文件大小： | 46K |
| 代理商： | MMPQ2222A |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 2 of 2
MMPQ2222, MMPQ2222A
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Typ.
Max.
Unit
ON CHARACTERISTICS (con’t)
Collector-Emitter Saturation Voltage
(1)
IC = 150 mAdc, IB = 15 mAdc
MMPQ2222
MMPQ2222A
IC = 300 mAdc, IB = 30 mAdc
MMPQ2222
IC = 500 mAdc, IB = 50 mAdc
MMPQ2222A
VCE(sat)
-
0.4
0.3
1.6
1.0
Vdc
Base-Emitter Saturation Voltage
(1)
IC = 150 mAdc, IB = 15 mAdc
MMPQ2222
MMPQ2222A
IC = 300 mAdc, IB = 30 mAdc
MMPQ2222
IC = 500 mAdc, IB = 50 mAdc
MMPQ2222A
VBE(sat)
-
1.3
1.2
2.6
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain – Bandwidth Product
(1)
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
fT
-
350
-
MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 kHz
Cobo
-4.5
-
pF
Input Capacitance
VBE = 0.5 Vdc, IC = 0, f = 100 kHz
Cibo
-17
-
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; VBE(off) = 0.5 Vdc, IC = 150 mAdc; IB1= 15 mAdc
ton
-25
-
ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
toff
-
250
-
ηs
(1) Pulse Test: Pulse Width
≤ 300s, Duty Cycle =2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 40V SOIC |
| MMPQ2222A_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2222A-CUT TAPE | 制造商:FAIRCHILD 功能描述:MMPQ Series 40 V CE Breakdown .5 A NPN General Purpose Amplifier SOIC-16 Package |
| MMPQ2222AR1 | 功能描述:两极晶体管 - BJT 500mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2222AR1G | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 40V 0.5A 16-Pin SOIC T/R |
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