- 您现在的位置：买卖IC网 > PDF目录95982 > MMS9018P (MICRO COMMERCIAL COMPONENTS) Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMS9018P |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 350K |
| 代理商： | MMS9018P |
MMS9018
Features
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.2Watts(Tamb=25
OC) of Power Dissipation.
Collector-current 0.05A
Collector-base Voltage 25V
Operating and storage junction temperature range: -55
OC to +150OC
Marking : J8
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
25
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
18
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
4.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=20Vdc, IE=0)
---
0.1
uAdc
ICEO
Collector Cutoff Current
(VCE=15Vdc, IB=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc)
70
190
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=100mAdc, IB=1.0mAdc)
---
1.4
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=5.0mAdc, VCE=5.0Vdc, f=400MHz)
600
---
MHz
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
F
Revision: 3
2006/05/13
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
相关PDF资料 |
PDF描述 |
|---|---|
| MMSD914T3 | 0.2 A, SILICON, SIGNAL DIODE |
| MMSF10N02ZR2 | 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMSF1310R2 | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMSF2P02ER1 | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMSF2P02ER2 | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MM-SA | 制造商:Ideal Industries Inc 功能描述: |
| MMS-B-1 | 制造商:MEDER 制造商全称:Meder Electronic 功能描述:Micro Machined Sensors |
| MMS-B-2 | 功能描述:近程传感器 MicroMachined SMT Gull wing RoHS:否 制造商:Vishay Semiconductors 感应方式:Optical 感应距离:1 mm to 200 mm 电源电压:2.5 V to 3.6 V 安装风格:SMD/SMT 输出配置:Digital 最大工作温度:+ 85 C 最小工作温度:- 25 C 系列:VCNL3020 |
| MMSD-02-20C-L-12.00-S-K-M | 制造商:Samtec Inc 功能描述:.100 SOCKET DISCREET CABLE ASSEMBLY - Bulk |
| MMSD-02-20C-L-24.00-S-K | 制造商:Samtec Inc 功能描述:.100 SOCKET DISCREET CABLE ASSEMBLY - Bulk |
发布紧急采购，3分钟左右您将得到回复。