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参数资料
| 型号： | MMSF1310R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 173K |
| 代理商： | MMSF1310R2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Low Power Surface Mount Products
Single N-Channel MiniMOS
Field Effect Transistor
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
High Speed Switching Provides High Efficiency for DC/DC
Converter
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Continuous Drain Current @ TA = 25°C (1)
Pulsed Drain Current (2)
ID
IDM
10
50
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.5
W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
THERMAL RESISTANCE
Junction–to–Ambient (1)
R
θJA
50
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
S1310
Device
Reel Size
Tape Width
Quantity
S1310
MMSF1310R2
13
″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMSF1310/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
CASE 751–06, Style 12
SO–8
MMSF1310
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 15 mW
Motorola Preferred Device
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
D
S
G
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相关代理商/技术参数 |
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| MMSF2P02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS |
| MMSF2P02ER2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF3205 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS |
| MMSF3300 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 30 VOLTS |
| MMSF3305 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
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