参数资料
型号: MMSF1310R2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 8/10页
文件大小: 173K
代理商: MMSF1310R2
MMSF1310
7
Motorola TMOS Power MOSFET Transistor Device Data
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO–8 POWER DISSIPATION
The power dissipation of the SO–8 is a function of the input
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, R
θJA, the thermal resistance from the
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SO–8
package, PD can be calculated as follows:
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 2.5 Watts.
PD =
150
°C – 25°C
50
°C/W
= 2.5 Watts
The 50
°C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 2.5 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad
.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
°C.
The soldering temperature and time shall not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5
°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
相关PDF资料
PDF描述
MMSF2P02ER1 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMSF2P02ER2 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMSF3305R2 6 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
MMSF3P02HDR2 5.6 A, 20 V, 0.095 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MMSF3P02ZR2 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
MMSF2P02E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
MMSF2P02ER2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MMSF3205 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS
MMSF3300 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 30 VOLTS
MMSF3305 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS