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参数资料
| 型号： | MMSF1310R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 173K |
| 代理商： | MMSF1310R2 |
MMSF1310
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DSon(
)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
8
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
8
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.04
01
2
4
0.02
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
515
1E–10
1E–09
1E–08
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(A)
VDS ≥ 10 V
TJ = 125°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 10 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
5
68
10 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
30
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
4
12
4
12
20
0.02
0.005
0.01
0
0.5
0
1E–11
0.05
0.01
3
25
°C
0.8
1.8
TJ = 25°C
VGS = 2.3 V
2.7 V
1
0
16
5
1E–06
10
20
25
2.9 V
3.1 V
3.5 V
4.5 V
34
0.015
0.03
W
1E–07
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