参数资料
型号: MMSF1310R2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 3/10页
文件大小: 173K
代理商: MMSF1310R2
MMSF1310
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
27
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.3
4.4
2.5
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
9.5
12.5
15
19
m
Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (1)
gFS
5.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vdc V
0 V
Ciss
1440
2020
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
680
960
Transfer Capacitance
f = 1.0 MHz)
Crss
195
280
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
24 Vd
I
10 Ad
td(on)
10
20
ns
Rise Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS =10Vdc
tr
36
72
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 ) (1)
td(off)
82
164
Fall Time
G
)
tf
95
190
Gate Charge
(V
15 Vd
I
10 Ad
QT
48
68
nC
(VDS = 15 Vdc, ID = 10 Adc,
(1)
Q1
3.0
( DS
, D
,
VGS = 10 Vdc) (1)
Q2
4.0
Q3
7.0
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc) (1)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.82
0.67
1.0
Vdc
Reverse Recovery Time
(I
10 Ad
V
0 Vd
trr
52
ns
(IS = 10 Adc, VGS = 0 Vdc,
(1)
ta
23
( S
,
GS
,
dIS/dt = 100 A/s) (1)
tb
30
Reverse Recovery Stored Charge
QRR
0.05
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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