参数资料
型号: MMSD701T1
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 137K
描述: DIODE SCHOTTKY SS 70V SOD-123
产品变化通告: Discontinuation 30/Jun/2006
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 70V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 200nA @ 35V
电容@ Vr, F: 1pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123
供应商设备封装: SOD-123
包装: 带卷 (TR)
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMSD301T1/D
MMSD301T1G,
SMMSD301T1G,
MMSD701T1G,
SMMSD701T1G,
SOD-123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin?offs of our
popular MMBD301LT1, and MMBD701LT1 SOT?23 devices. They
are designed for high?efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
VR
30
70
Vdc
Forward Current (DC) Continous
IF
200
mA
Forward Power Dissipation
TA
= 25
?C
PF
225
mW
Junction Temperature
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOD?123
CASE 425
STYLE 1
Device Package Shipping?
ORDERING INFORMATION
MMSD301T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
xx = Specific Device Code
XT = MMSD301T1G
SMMSD301T1G
XH = MMSD701T1G
SMMSD701T1G
M = Date Code
= Pb?Free Package
1
Cathode
2
Anode
MMSD701T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
XXX M
1
(Note: Microdot may be in either location)
SMMSD301T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
SMMSD701T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
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MMSD701T1G 功能描述:肖特基二极管与整流器 70V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MMSD71RKT1 功能描述:二极管 - 通用,功率,开关 80V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMSD71RKT1G 功能描述:二极管 - 通用,功率,开关 80V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMSD914 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMSD914_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Small Signal Diode