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参数资料
| 型号： | MMSF3305R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 207K |
| 代理商： | MMSF3305R2 |
MMSF3305
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
—
1.0
5.0
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(1) (3)
(VGS = 10 Vdc, ID = 8.0 Adc)
(VGS = 4.5 Vdc, ID = 6.0 Adc)
RDS(on)
—
17
29
20
33
m
On–State Drain Current
(VDS ≤ 5.0 V, VGS = 10 V)
(VDS ≤ 5.0 V, VGS = 4.5 V)
ID(on)
40
10
—
A
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
(1)
gFS
—
14
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
30 Vdc V
0 Vdc
Ciss
—
1655
2315
pF
Output Capacitance
(VDS = 30 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
550
770
Transfer Capacitance
f = 1.0 MHz)
Crss
—
240
330
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
15 Vd
I
1 0 Ad
td(on)
—
12.6
26
ns
Rise Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
—
15.2
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 ) (1)
td(off)
—
53.2
106
Fall Time
G
)( )
tf
—
38.9
78
Gate Charge
See Figure 8
(V
15 Vd
I
4 6 Ad
QT
—
47
60
nC
See Figure 8
(VDS = 15 Vdc, ID = 4.6 Adc,
Q1
—
4.5
—
( DS
, D
,
VGS = 10 Vdc) (1)
Q2
—
13.7
—
Q3
—
10.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1.1
—
1.4
—
Vdc
Reverse Recovery Time
See Figure 15
(I
2 1 Ad
V
0 Vd
trr
—
38
76
ns
See Figure 15
(IS = 2.1 Adc, VGS = 0 Vdc,
ta
—
22
—
( S
,
GS
,
dIS/dt = 100 A/s) (1)
tb
—
16
—
Reverse Recovery Stored Charge
QRR
—
0.046
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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