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参数资料
| 型号： | MMSF3305R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 207K |
| 代理商： | MMSF3305R2 |
MMSF3305
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
8
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
5
0
8
16
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.06
0.1
04
8
16
0.04
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
510
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 8.0 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 8 A
34
68
10 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
25
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
4
12
4
12
20
0.04
0.01
0.02
0.03
0
0.5
0
0.1
0.08
0.02
12
25
°C
0.8
1.8
TJ = 25°C
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
6 V
10 V
1
0
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