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参数资料
| 型号： | MMST2222A-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 70K |
| 代理商： | MMST2222A-13 |
DS30080 Rev. 7 - 2
2 of 4
MMST2222A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
10
nA
mA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150
°C
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
35
50
75
100
40
50
35
300
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55
°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = 10V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
25
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
60
ns
Notes:
3. Short duration test pulse used to minimize self-heating effect.
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