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参数资料
| 型号： | MMST3906T146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 121K |
| 代理商： | MMST3906T146 |
UMT3906/SST3906/MMST3906
Transistors
Rev.B
1/4
PNP General Purpose Transistor
UMT3906 /SST3906 /MMST3906
Features
1) BVCEO>40V (IC=1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25
°C)
Dimensions (Unit : mm)
UMT3906
SST3906
MMST3906
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
Max.
Typ.
40
5
50
0.25
0.85
0.95
0.4
0.65
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Emitter cutoff current
ICES
IEBO
Collector cutoff current
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
hFE
Cob
Cib
fT
60
30
250
4.5
10
35
225
75
80
100
300
td
tr
tstg
tf
V
nA
MHz
pF
ns
IC=
10A
IC=
1mA
IE=
10A
VCB=
30V
VEB=
3V
VCE=
1V, IC= 0.1mA
VCE=
1V, IC= 1mA
VCE=
1V, IC= 10mA
VCE=
1V, IC= 50mA
VCE=
1V, IC= 100mA
VCE=
20V, IE=10mA, f=100MHz
VCB=
10V, f=100kHz, IE=0A
VCB=
0.5V, f=100kHz, IC=0A
VCC=
3V, VBE(OFF)= 0.5V,IC= 10mA, IB1= 1mA
VCC=
3V, VBE(OFF)= 0.5V,IC= 10mA, IB1= 1mA
VCC=
3V, IC= 10mA, IB1= IB2= 1mA
VCC=
3V, IC= 10mA, IB1= IB2= 1mA
IC/IB=
10mA/ 1mA
IC/IB=
10mA/ 1mA
IC/IB=
50mA/ 5mA
IC/IB=
50mA/ 5mA
Type
UMT3906
UMT3
R2A
T106
3000
SST3906
SST3
R2A
T116
3000
MMST3906
SMT3
R2A
T146
3000
Packaging type
Marking
Code
Basic ordering unit (pieces)
Parameter
Symbol
VCBO
VCEO
VEBO
Pd
Tj
Tstg
Limits
40
5
6.2
0.35
SST3906,MMST3906
UMT3906
150
55 to +150
Unit
V
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IO
0.2
Collector current
Collector Power
dissipation
Junction temperature
Storage temperature
A
W
When mounted on a 7 5 0.6mm ceramic board.
+ +
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST3906-TP | 功能描述:两极晶体管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4001 | 制造商:WINNERJOIN 制造商全称:WINNERJOIN 功能描述:TRANSISTOR (NPN) |
| MMST4124 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST4124_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST4124_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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