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参数资料
型号： MMST4403-13
厂商： DIODES INC
元件分类： 小信号晶体管
英文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装： ULTRA SMALL, PLASTIC PACKAGE-3
文件页数： 2/4页
文件大小： 75K
代理商： MMST4403-13
DS30083 Rev. 5 - 2
2 of 4
MMST4403
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
V
IC = -100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -100
mA, IC = 0
Collector Cutoff Current
ICEX
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
Base Cutoff Current
IBL
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
30
60
100
20
300
IC = -100A, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
k
W
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
8.0
x 10-4
Small Signal Current Gain
hfe
60
500
Output Admittance
hoe
1.0
100
mS
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
15
ns
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
Rise Time
tr
20
ns
Storage Time
ts
225
ns
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time
tf
30
ns
Ordering Information (Note 4)
Device
Packaging
Shipping
MMST4403-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST4403-7-F.
Marking Information
K3T
YM
K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
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相关代理商/技术参数
参数描述
MMST4403-7 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMST4403-7-F 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMST4403-T 功能描述:两极晶体管 - BJT -600mA -40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMST4403T146 功能描述:两极晶体管 - BJT PNP 40V 0.6V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMST4403T246 制造商:ROHM SEMICONDUCTOR 功能描述:TRANS GP BJT PNP 40V 0.6A 3P TR
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