参数资料
型号: MMSTA06-13
厂商: DIODES INC
元件分类: 小信号晶体管
英文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ULTRA SMALL, PLASTIC PACKAGE-3
文件页数: 2/4页
文件大小: 0K
代理商: MMSTA06-13
DS30168 Rev. 6 - 2
2 of 4
MMSTA05/MMSTA06
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
MMSTA05
MMSTA06
V(BR)CBO
60
80
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
MMSTA05
MMSTA06
V(BR)CEO
60
80
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 100
mA, IC = 0
Collector Cutoff Current
MMSTA05
MMSTA06
ICBO
100
nA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current
MMSTA05
MMSTA06
ICES
100
nA
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
100
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
V
IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.2
V
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 2.0V, IC = 10mA,
f = 100MHz
Ordering Information (Note 4)
Device
Packaging
Shipping
MMSTA05-7
SOT-323
3000/Tape & Reel
MMSTA06-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: MMSTA06-7-F.
Marking Information
K1x
YM
K1x = Product Type Marking Code, ex: K1H = MMSTA05
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
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MMSTA06T146 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
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MMSTA06-7 功能描述:两极晶体管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMSTA06-7-F 功能描述:两极晶体管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMSTA06T146 功能描述:两极晶体管 - BJT NPN 80V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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MMSTA13_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR