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参数资料
| 型号： | MMSTA28T146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 73K |
| 代理商： | MMSTA28T146 |
SSTA28 / MMSTA28
Transistors
Rev.A
2/2
Electrical characteristic curves
5
10
15
20
25
30
35
40
45
50
0
400
450
300
350
200
250
150
100
50
500
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IB=0
A
Ta=25
°C
IC
-COLLECTOR
CURRENT
(
mA)
VCE-COLLECTOR-EMITTER VOLTAGE (
V)
Fig.1 Grounded emitter output
characteristics
0
80
90
60
70
40
50
30
20
10
100
5.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
IB=0
A
Ta=25
°C
IC
-COLLECTOR
CURRENT
(
mA)
VCE-COLLECTOR-EMITTER VOLTAGE (
V)
Fig.2 Typical output characteristics
1.4
1.6
1.2
1.0
0.8
0.6
0.4
0.2
1
2
5
10
20
50 100 200 5001000
2k
5k
10k
20k
50k
100k
200k
h
FE
-DC
CURRENT
GAIN
IC-COLLECTOR CURRENT (
mA)
Ta=25
°C
VCE=5V
3V
1V
Fig.3 DC current gain vs. collector
current (
ΙΙ )
1
2
5
10
20
50 100 200 5001000
2k
5k
10k
20k
50k
100k
200k
h
FE
-DC
CURRENT
GAIN
IC-COLLECTOR CURRENT (
mA)
VCE=5V
Fig.4 DC current gain vs. collector
current
Ta=25
°C
25
°C
40°C
1
2
5
10
20
50 100 200 5001000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
CE(SAT)
COLLECTOR
EMITTER
SATURATION
VOLTAGE
(V)
IC-COLLECTOR CURRENT (
mA)
Fig.5 Collecor emitter saturation
voltage vs collector current
Ta=
40°C
25
°C
125
°C
Ic/IB=1000
1
2
5
10
20
50 100 200 500 1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
CE(SAT)
COLLECTOR
EMITTER
SATURATION
VOLTAGE
(V)
IC-COLLECTOR CURRENT (
mA)
Fig.6 Base emitter saturation voltage
vs collector current
Ta=
40°C
25
°C
125
°C
Ic/IB=1000
1
2
5
10
20
50 100 200 500 1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
BE(ON)
BASE
EMITTER
VOLTAGE
(V)
IC-COLLECTOR CURRENT (
mA)
Fig.7 Base emitter "ON" voltage
vs collector current
Ta=
40°C
25
°C
125
°C
VCE=5V
0.5
1
2
5
10
20
50
2
20
10
5
100
50
1
CAPACITANCE
(
pF)
REVERSE BIAS VOLTAGE (
V)
Cib
Cob
Fig.8 Capacitance
vs reverse bias voltage
f=1MHz
Ta=25
°C
1
10
100
1000
100
200
500
1000
10
20
50
CURRENT
GAIN-BANDWIDTH
PRODUCT
(
MHz)
IC-COLLECTOR CURRENT (
mA)
Ta=25
°C
VCE=10V
Fig.9 Current gain-bandwdth product
vs collector current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSTA42 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA42_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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| MMSTA42-7 | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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