参数资料
| 型号： | MMT08B260T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TSPD BIDIRECT 260V 80A SMB |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 320V |
| 电压 - 断路： | 200V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 250A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 80A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 55pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
MMT08B260T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover?triggered crowbar
protectors. Turn?off occurs when the surge current falls below the
http://onsemi.com
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
BIDIRECTIONAL TSPD (
80 AMP SURGE, 260 VOLTS
)
? High Surge Current Capability: 80 Amps 10 x 1000 m sec, for
Controlled Temperature Environments
?
The MMT08B260T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
MT1
MT2
?
?
?
?
?
?
?
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non?Semiconductor
Devices
Fail?Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered ? File #E210057
Pb?Free Package is Available
SMB
(No Polarity)
(Essentially JEDEC DO?214AA)
CASE 403C
MARKING DIAGRAM
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
AYWW
RPCG G
G
Off?State Voltage ? Maximum
V DM
± 200
V
Maximum Pulse Surge Short Circuit Current
Non?Repetitive
Double Exponential Decay Waveform
(?25 ° C Initial Temperature) (Notes 1 & 2)
2 x 10 m sec
8 x 20 m sec
10 x 160 m sec
10 x 360 m sec
10 x 560 m sec
10 x 700 m sec
10 x 1000 m sec
Non?Repetitive Peak On?State Current
60 Hz Full Sign Wave
I PPS1
I PPS2
I PPS3
I PPS4
I PPS5
I PPS6
I PPS7
I TSM
± 250
± 250
± 150
± 150
± 100
± 100
± 80
32
A(pk)
A(pk)
A = Assembly Location
Y = Year
WW = Work Week
RPCG = Device Code
G = Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
MMT08B260T3
SMB
2500 Tape & Reel
Maximum Non?Repetitive Rate of Change of
On?State Current Exponential Waveform,
I pk < 100A
di/dt
± 300
A/ m s
MMT08B260T3G
SMB
(Pb?Free)
2500 Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 3
1
Publication Order Number:
MMT08B260T3/D
相关PDF资料 |
PDF描述 |
|---|---|
| MMT08B310T3 | THYRIST TSPD BIDIR 80A 310V SMB |
| MMT08B350T3G | TSPD BIDIRECT 350V 80A SMB |
| MMT10B310T3G | THYRIST TSPD BIDIR 100A 270V SMB |
| MMT10B350T3G | THYRIST TSPD BIDIR 100A 350V SMB |
| MNT-102-BK-T | CONN SHUNT 4POS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMT08B310T3 | 功能描述:硅对称二端开关元件 80A Surge 310V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT08B310T3_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT08B310T3G | 功能描述:硅对称二端开关元件 80A Surge 310V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT08B350T3 | 功能描述:硅对称二端开关元件 80A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT08B350T3G | 功能描述:硅对称二端开关元件 80A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
发布紧急采购，3分钟左右您将得到回复。