参数资料
型号: MMT08B310T3
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: THYRIST TSPD BIDIR 80A 310V SMB
产品变化通告: Product Discontinuation 20/Aug/2008
标准包装: 2,500
电压 - 击穿: 365V
电压 - 断路: 270V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 250A
电流 - 峰值脉冲(10 x 1000µs): 80A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 50pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
其它名称: MMT08B310T3OS
MMT08B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover?triggered crowbar
protectors. Turn?off occurs when the surge current falls below the
http://onsemi.com
holding current value.
? High Surge Current Capability: 80 Amps 10 x 1000 μ sec, for
Controlled Temperature Environments
? The MMT08B310 is used to help equipment meet various regulatory
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,
BIDIRECTIONAL TSPD (
80 AMP SURGE
310 VOLTS
)
UL 1459 & 1950 and FCC Part 68.
? Bidirectional Protection in a Single Device
? Little Change of Voltage Limit with Transient Amplitude or Rate
? Freedom from Wearout Mechanisms Present in Non?Semiconductor
Devices
? Fail?Safe, Shorts When Overstressed, Preventing Continued
MT1
MT2
Unprotected Operation
? Surface Mount Technology (SMT)
? Indicates UL Registered ? File #E210057
? Pb?Free Package is Available
SMB
(No Polarity)
(Essentially JEDEC DO?214AA)
CASE 403C
MARKING DIAGRAM
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Off?State Voltage ? Maximum
MMT08B310T3
Maximum Pulse Surge Short Circuit
Symbol
V DM
Value
" 270
Unit
V
A(pk)
AYWW
RPCJ G
G
RPCJ = Specific Device Code
Current Non?Repetitive
Double Exponential Decay Waveform
A = Assembly Location
Y = Year
(Notes 1 and 2)
10 x 1000 μ sec
(?25 ° C Initial Temperature)
8 x 20 μ sec
10 x 160 μ sec
10 x 560 μ sec
I PPS1
I PPS2
I PPS3
I PPS4
" 80
" 250
" 150
" 100
WW = Work Week
G = Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum Non?Repetitive Rate of
di/dt
" 150
A/ μ s
Device
Package
Shipping ?
Change of On?State Current
Double Exponential Waveform,
MMT08B310T3
SMB
2500 Tape & Reel
R = 1.0, L = 1.5 μ H, C = 1.67 μ F,
I pk = 110A
MMT08B310T3G
SMB
2500 Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
Pb?Free
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Measured under pulse conditions to reduce heating.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 3
1
Publication Order Number:
MMT08B310T3/D
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MMT08B310T3_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD
MMT08B310T3G 功能描述:硅对称二端开关元件 80A Surge 310V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
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