参数资料
| 型号： | MMT08B310T3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | THYRIST TSPD BIDIR 80A 310V SMB |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 365V |
| 电压 - 断路： | 270V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 250A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 80A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 50pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
| 其它名称： | MMT08B310T3OS |
MMT08B310T3
THERMAL CHARACTERISTICS
Operating Temperature Range
Characteristic
Symbol
T J1
Max
?40 to + 125
Unit
° C
Blocking or Conducting State
Overload Junction Temperature ? Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I pk = 50 A, 10x1000 μ sec @ 25 ° C)
Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 Seconds
T J2
P PK
T L
+ 175
2000
260
° C
W
° C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ μ s, I SC = 1.0 A, Vdc = 1000 V)
(+65 ° C)
MMT08B310T3
V (BO)
?
?
365
V
Breakover Voltage (Both polarities)
MMT08B310T3
V (BO)
?
?
400
V
(f = 60 Hz, I SC = 1.0 A(rms), V OC = 1000 V(rms),
R I = 1.0 k Ω , t = 0.5 cycle) (Note 3)
(+65 ° C)
MMT08B310T3
MMT08B310T3
?
?
?
?
365
400
Breakover Voltage Temperature Coefficient
dV (BO) /dT J
?
0.08
?
%/ ° C
Breakdown Voltage (I (BR) = 1.0 mA) Both polarities
Off State Current (V D1 = 50 V) Both polarities
Off State Current (V D2 = V DM ) Both polarities
MMT08B310T3
V (BR)
I D1
I D2
?
?
?
310
?
?
?
2.0
5.0
V
μ A
On?State Voltage (I T = 1.0 A)
(PW ≤ 300 μ s, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V DM = 1000 V(rms), R S = 1.0 k Ω )
V T
I BO
?
?
1.53
230
3.0
?
V
mA
Both polarities
Holding Current (Both polarities)
V S = 500 Volts; I T (Initiating Current) = " 1.0 Amp
Critical Rate of Rise of Off?State Voltage
(Linear waveform, V D = Rated V BR , T J = 25 ° C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
(Note 3)
I H
dv/dt
C O
150
2000
?
340
?
23
?
?
25
mA
V/ μ s
pF
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
?
?
50
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
I D1 , I D2
V D1 , V D2
Off State Leakage Current
Off State Blocking Voltage
V TM
V (BO)
V BR
V BO
Breakdown Voltage
Breakover Voltage
I H
I D1
I D2
I (BO)
I BO
Breakover Current
I H
V TM
Holding Current
On State Voltage
V D1
V D2
V (BR)
+ Voltage
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