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参数资料
| 型号： | MP4212 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-25A1C, SIP-10 |
| 文件页数： | 2/11页 |
| 文件大小： | 211K |
| 代理商： | MP4212 |
MP4212
2006-10-27
10
Drain-source voltage VDS (V)
Safe Operating Area
(be applicable to Nch MOS FET)
Drain
curren
t
I D
(A)
Drain-source voltage VDS (V)
Safe Operating Area
(be applicable to Pch MOS FET)
Drain
curren
t
I D
(A)
Channel temperature Tch (°C)
EAS – Tch
(be applicable to Nch MOS FET)
A
valan
che
ene
rgy
E
AS
(mJ)
Channel temperature Tch (°C)
EAS – Tch
(be applicable to Pch MOS FET)
A
valan
che
ene
rgy
E
AS
(mJ)
)
0
25
100
200
300
400
500
50
75
100
125
150
0
25
40
80
120
160
200
50
75
100
125
150
TEST CIRCUIT
TEST WAVE FORM
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25
VDD = 25 V, L = 7 mH
15 V
=
DD
VDSS
2
AS
V
B
LI
2
1
Ε
TEST CIRCUIT
TEST WAVE FORM
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25
VDD = 25 V, L = 14.84 mH
15 V
=
DD
VDSS
2
AS
V
B
LI
2
1
Ε
0.1
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.3
1
3
10
30
3
10
30
300
ID max
1 ms*
100 μs*
10 ms*
IDP max
100 ms*
100
0.1
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.3
1
3
10
30
3
10
30
300
IDP max
1 ms*
100 μs*
10 ms*
ID max
100 ms*
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