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参数资料
| 型号： | MP4212 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-25A1C, SIP-10 |
| 文件页数： | 4/11页 |
| 文件大小： | 211K |
| 代理商： | MP4212 |
MP4212
2006-10-27
2
Array Configuration
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
31.2
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C) (Nch MOS FET)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
μA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2.5 A
―
0.21
0.32
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
―
0.12
0.16
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
5.0
―
S
Input capacitance
Ciss
―
370
―
pF
Reverse transfer capacitance
Crss
―
60
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
180
―
pF
Rise time
tr
―
18
―
Turn-on time
ton
―
25
―
Fall time
tf
―
55
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
―
170
―
ns
Total gate charge
(Gate-source plus gate-drain)
Qg
―
12
―
nC
Gate-source charge
Qgs
―
8
―
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
―
4
―
nC
9
7
6
8
10
5
3
2
4
1
10 V
VGS
R
L=
12
VDD ≈ 30 V
ID = 2.5 A
VOUT
50
0 V
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