参数资料
型号: MP4212
元件分类: JFETs
英文描述: 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-25A1C, SIP-10
文件页数: 7/11页
文件大小: 211K
代理商: MP4212
MP4212
2006-10-27
5
Nch MOS FET
Gate-source voltage VGS (V)
ID – VGS
Drain
curren
t
I D
(A)
Gate-source voltage VGS (V)
VDS – VGS
Drain-
sou
rce
volt
ag
e
V
DS
(V)
Drain-source voltage VDS (V)
ID – VDS
Drain
curren
t
I D
(A)
Drain-source voltage VDS (V)
ID – VDS
Drain
curren
t
I D
(A)
Drain-
sou
rce
O
N
re
sis
tan
ce
R
DS
(ON)
(
)
Drain current ID (A)
|Yfs| – ID
Forward
transfer
ad
mitt
an
ce
|Y
fs
|
(S
)
Drain current ID (A)
RDS (ON) – ID
Common source
Tc = 25°C
0.03
0.3
10
VGS = 4 V
0.5
1
3
5
10
0.05
0.1
0.3
0.5
0.3
0.5
100
25
Tc = 55°C
Common source
VDS = 10 V
1
3
5
10
20
0.5
1
3
5
10
30
0
Common source
VDS = 10 V
100
25
Tc = 55°C
2
4
6
8
10
0
2
4
6
8
10
0
3.5
3
3.3
10
6
8
4
Common source
Tc = 25°C
1
2
3
4
5
0.4
0.8
1.2
1.6
2.0
VGS = 2.5 V
Common source
Tc = 25°C
4
3
3.5
10
6
8
VGS = 2.5 V
4.5
0
4
8
12
16
20
0
4
8
12
16
20
0
Common source
Tc = 25°C
5
8
ID = 2.5 A
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
相关PDF资料
PDF描述
MP6404 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MP6404 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MP6M11 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MPC5123YVY300B RISC PROCESSOR, PBGA516
MPC5123VY300BR RISC PROCESSOR, PBGA516
相关代理商/技术参数
参数描述
MP4212_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Power High Speed Switching Applications H-Switch Driver
MP42141 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar Low Noise Microwave Transistors
MP4214100 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar Low Noise Microwave Transistors
MP4214135 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar Low Noise Microwave Transistors
MP42141-509 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar Low Noise Microwave Transistors