参数资料
型号: MP6301
元件分类: 功率晶体管
英文描述: 3 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
封装: SIP-12
文件页数: 1/4页
文件大小: 134K
代理商: MP6301
MP6301
2006-10-27
1
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type
(Six Darlington Power Transistors inOne)
MP6301
High Power Switching Applications
3-Phase Motor Drive and Bipolar Drive of Pulse Motor
Small package by full molding (SIP 12 pins)
High collector power dissipation (6-device operation)
: PT = 4.4 W (Ta = 25°C)
High collector current: IC (DC) = ±3 A (max)
High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
8
V
DC
IC
3
Collector current
Pulse
ICP
5
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(6-device operation)
PT
4.4
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1F
Weight: 3.9 g (typ.)
2
1
R1 R2
11
R1 ≈ 4.5 k, R2 ≈ 300
5
8
10
7
4
3
6
9
12
R1 R2
相关PDF资料
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MP6704 10 A, 500 V, 0.5 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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MP6002 12 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
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