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参数资料
| 型号： | MP6301 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封装： | SIP-12 |
| 文件页数： | 2/4页 |
| 文件大小： | 134K |
| 代理商： | MP6301 |
MP6301
2006-10-27
2
Marking
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(6-device operation, Ta = 25°C)
ΣRth (j-a)
28.4
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
―
20
μA
Collector cut-off current
ICEO
VCE = 80 V, IB = 0 A
―
20
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0 A
0.8
―
4.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
80
―
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
―
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
1000
―
Collector-emitter
VCE (sat)
IC = 2 A, IB = 4 mA
―
1.8
Saturation voltage
Base-emitter
VBE (sat)
IC = 2 mA, IB = 4 mA
―
2.3
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
―
20
―
pF
Turn-on time
ton
―
0.4
―
Storage time
tstg
―
3.0
―
Switching time
Fall time
tf
IB1 = IB2 = 4 mA, duty cycle ≤ 1%
―
0.6
―
μs
I B1
20 μs
VCC = 30 V
Output
15
IB2
IB1
Input
I B2
MP6301
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
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|---|---|
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