参数资料
型号: MP6301
元件分类: 功率晶体管
英文描述: 3 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
封装: SIP-12
文件页数: 3/4页
文件大小: 134K
代理商: MP6301
MP6301
2006-10-27
3
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
3
A
Surge current
IFSM
t = 1 s, 1 shot
5
A
Forward voltage
VF
IF = 1 A, IB = 0 A
2.0
V
Reverse recovery time
trr
1
μs
Reverse recovery charge
Qrr
IF = 3 A, VBE = 3 V, dIF/dt = 50 A/μs
5
μC
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
20
μA
Collector cut-off current
ICEO
VCE = 80 V, IB = 0 A
20
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0 A
0.8
4.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
80
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
1000
Collector-emitter
VCE (sat)
IC = 2 A, IB = 4 mA
1.8
Saturation voltage
Base-emitter
VBE (sat)
IC = 2 A, IB = 4 mA
2.3
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
30
pF
Turn-on time
ton
0.4
Storage time
tstg
1.8
Switching time
Fall time
tf
IB1 = IB2 = 4 mA, duty cycle ≤ 1%
0.4
μs
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
3
A
Surge current
IFSM
t = 1 s, 1 shot
5
A
Forward voltage
VF
IF = 1 A, IB = 0 A
2.0
V
Reverse recovery time
trr
500
μs
Reverse recovery charge
Qrr
IF = 3 A, VBE = 3 V, dIF/dt = 50 A/μs
2.7
μC
I B1
20 μs
VCC = 30 V
Output
15
IB1
IB2
Input
I B2
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