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参数资料
| 型号： | MP6K12 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.063 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 1196K |
| 代理商： | MP6K12 |
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Data Sheet
MP6K12
Electrical characteristics (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Unit
Gatesource leakage
IGSS
10
AVGS=20V, VDS=0V
Drainsource breakdown voltage V (BR)DSS
30
VID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
2.5
V
VDS=10V, ID=1mA
30
42
ID=5.0A, VGS=10V
40
56
ID=5.0A, VGS=4.5V
45
63
ID=5.0A, VGS=4.0V
Forward transfer admittance
l Yfs l
2.5
SID=5.0A, VDS=10V
Input capacitance
Ciss
250
pF
VDS=10V
Output capacitance
Coss
90
pF
VGS=0V
Reverse transfer capacitance
Crss
45
pF
f=1MHz
Turnon delay time
td(on)
6
ns
ID=2.5A, VDD 15V
Rise time
tr
27
ns
VGS=10V
Turnoff delay time
td(off)
26
ns
RL=6.0
Fall time
tf
5
ns
RG=10
Total gate charge
Qg
4.0
nC ID=5.0A, VDD 15V
Gatesource charge
Qgs
1.2
nC VGS=5V
Gatedrain charge
Qgd
1.2
nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max. Unit
Forward Voltage
VSD
1.2
V
Is=5.0A, VGS=0V
*Pulsed
Conditions
m
Parameter
Static drainsource onstate
resistance
RDS (on)*
*
2/6
2011.04 - Rev.A
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