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参数资料
| 型号： | MP6K12 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.063 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 1196K |
| 代理商： | MP6K12 |
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Data Sheet
MP6K12
10
100
1000
0.1
1
10
V
GS= 4.0V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current (IV)
DRAIN-CURRENT : I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
W
]
0.1
1
10
0.01
0.1
1
10
V
DS= 10V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
F
O
RW
A
RD
T
RANSF
E
R
A
DM
IT
T
A
NC
E
:
|Y
fs
|
[S
]
DRAIN-CURRENT : I
D[A]
0.01
0.1
1
10
0
0.5
1
1.5
V
GS=0V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
S
OURC
E
CU
RR
E
NT
:
I
s
[
A
]
SOURCE-DRAIN VOLTAGE : V
SD [V]
0
20
40
60
80
100
0
5
10
I
D= 5.0A
I
D= 2.5A
T
a=25°C
Pulsed
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( ON
)[m
W
]
GATE-SOURCE VOLTAGE : V
GS[V]
1
10
100
1000
0.01
0.1
1
10
t
f
t
d(on)
t
d(off)
T
a=25°C
V
DD=15V
V
GS=10V
R
G=10Ω
Pulsed
t
r
Fig.11 Switching Characteristics
S
W
IT
CH
ING
T
IM
E
:
t
[n
s
]
DRAIN-CURRENT : I
D[A]
0
2
4
6
8
10
0
2
4
6
8
10
T
a=25°C
V
DD= 15V
I
D= 5.0A
R
G=10Ω
Pulsed
Fig.12 Dynamic Input Characteristics
GA
T
E
-S
OURC
E
V
OL
T
A
GE
:
V
GS
[V
]
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.04 - Rev.A
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