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参数资料
| 型号： | MP6K12 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.063 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 1196K |
| 代理商： | MP6K12 |
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2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
MP6K12
Electrical characteristic curves (Ta=25
C)
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
V
GS= 2.0V
T
a=25°C
Pulsed
V
GS= 10V
V
GS= 4.5V
V
GS= 4.0V
V
GS= 3.0V
V
GS= 2.5V
Fig.1 Typical Output Characteristics (
I )
DR
A
IN
CUR
RE
NT
:
I D
[A
]
DRAIN-SOURCE VOLTAGE : V
DS[V]
0
1
2
3
4
5
0
2
4
6
8
10
V
GS= 2.0V
T
a=25°C
Pulsed
V
GS= 2.5V
V
GS= 10V
V
GS= 4.5V
V
GS= 4.0V
V
GS= 2.8V
Fig.2 Typical Output Characteristics (
II)
DRAIN-SOURCE VOLTAGE : V
DS[V]
DR
A
IN
CUR
RE
NT
:
I D
[A
]
0.001
0.01
0.1
1
10
0
1
2
3
V
DS= 10V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.3 Typical Transfer Characteristics
DR
A
IN
CUR
RE
NT
:
I D
[A
]
GATE-SOURCE VOLTAGE : V
GS[V]
10
100
1000
0.1
1
10
V
GS= 4.0V
V
GS= 4.5V
V
GS= 10V
.
T
a=25°C
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
I )
DRAIN-CURRENT : I
D[A]
S
T
A
T
IC
DR
A
IN
-S
O
UR
CE
O
N
-S
T
A
T
E
RES
IS
T
A
NC
E
:
R
DS
( on
)[
m
W
]
10
100
1000
0.1
1
10
V
GS= 10V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (
II)
DRAIN-CURRENT : I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
W
]
10
100
1000
0.1
1
10
V
GS= 4.5V
Pulsed
T
a= 125°C
T
a= 75°C
T
a= 25°C
T
a= - 25°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (
III)
DRAIN-CURRENT : I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
( on
)[m
W
]
3/6
2011.04 - Rev.A
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