参数资料
型号: MP6M63TR
元件分类: JFETs
英文描述: 5 A, 30 V, 0.077 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: MPT6, 6 PIN
文件页数: 3/10页
文件大小: 119K
代理商: MP6M63TR
MP6M63
Transistors
2/9
N-ch
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
±10
AVGS=±20V, VDS=0V
VDD 15V
RL
=3.0, RG=10
30
VID
=1mA, VGS=0V
1
AVDS=30V, VGS=0V
1.0
2.5
V
VDS
=10V, ID=1mA
36
51
ID
=5.0A, VGS=10V
50
70
m
ID=5.0A, VGS=4.5V
55
77
ID
=5.0A, VGS=4.0V
3.0
SID
=5.0A, VDS=10V
460
pF
VDS
=10V
80
60
pF
VGS
=0V
10
pF
f
=1MHz
VGS
=10V
RL
=6.0
RG
=10
20
ns
25
ns
5
ns
4.0
ns
1.8
nC
1.5
nC
VGS
=5V
nC
ID
=5.0A,
ID
=2.5A, VDD 15V
Body diode characteristics (Source-Drain) (Ta=25
°C)
VSD
1.2
V
IS
=5.0A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward voltage
Pulsed
相关PDF资料
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