参数资料
型号: MP6M63TR
元件分类: JFETs
英文描述: 5 A, 30 V, 0.077 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: MPT6, 6 PIN
文件页数: 4/10页
文件大小: 119K
代理商: MP6M63TR
MP6M63
Transistors
3/9
P-ch
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
±10
AVGS=±20V, VDS=0V
VDD
15V
30
VID
= 1mA, VGS=0V
1
AVDS= 30V, VGS=0V
1.0
2.5
V
VDS
= 10V, ID= 1mA
40
56
ID
= 4.5A, VGS= 10V
55
77
m
ID= 2.5A, VGS= 4.5V
60
84
ID
= 2.5A, VGS= 4.0V
3.5
SID
= 4.5A, VDS= 10V
800
pF
VDS
= 10V
120
110
pF
VGS
=0V
10
pF
f
=1MHz
VGS
= 10V
RL
=6.0
RG
=10
25
ns
80
ns
65
ns
8.4
ns
3.0
nC
3.5
nC
VGS
= 5V
nC
ID
= 4.5A,
ID
= 2.5A, VDD 15V
RL
=3.3, RG=10
Body diode characteristics (Source-Drain) (Ta=25
°C)
VSD
1.2
V
IS
= 4.5A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward voltage
Pulsed
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