参数资料
型号: MPC5534MZQ80
厂商: Freescale Semiconductor
文件页数: 16/60页
文件大小: 0K
描述: MCU 1MB FLASH 80MHZ 324-PBGA
标准包装: 60
系列: MPC55xx Qorivva
核心处理器: e200z6
芯体尺寸: 32-位
速度: 80MHz
连通性: CAN,EBI/EMI,以太网,SCI,SPI
外围设备: DMA,POR,PWM,WDT
输入/输出数: 192
程序存储器容量: 1MB(1M x 8)
程序存储器类型: 闪存
RAM 容量: 64K x 8
电压 - 电源 (Vcc/Vdd): 1.35 V ~ 1.65 V
数据转换器: A/D 40x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 324-BBGA
包装: 托盘
Electrical Characteristics
MPC5534 Microcontroller Data Sheet, Rev. 6
Freescale Semiconductor
23
3.11
H7Fb Flash Memory Electrical Characteristics
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
Flash Program Characteristic
Symbol
Min.
Typical 1
1 Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values.
Initial
Max. 2
2 Initial factory condition:
100program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
Max. 3
3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
3
Doubleword (64 bits) program time 4
4 Actual hardware programming times. This does not include software overhead.
Tdwprogram
10
500
s
4
Page program time 4
Tpprogram
22
44 5
5 Page size is 128 bits (4 words).
500
s
7
16 KB block pre-program and erase time
T16kpperase
325
525
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
435
525
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
525
675
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
675
1800
7500
ms
11
Minimum operating frequency for program and erase
operations 6
6 The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency
condition.
—25
MHz
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
Characteristic
Symbol
Min.
Typical 1
1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
Retention
20
5
years
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