参数资料
型号: MPC5604PEF0VLL4R
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT LQFP-100
文件页数: 43/99页
文件大小: 1130K
代理商: MPC5604PEF0VLL4R
MPC5604P Microcontroller Data Sheet, Rev. 7
Freescale Semiconductor
48
3.6
Electromagnetic interference (EMI) characteristics
3.7
Electrostatic discharge (ESD) characteristics
3.8
Power management electrical characteristics
3.8.1
Voltage regulator electrical characteristics
The internal voltage regulator requires an external NPN (BCP56, BCP68, BCX68 or BC817) ballast to be connected as shown
in Figure 8 and Figure 9. Capacitances should be placed on the board as near as possible to the associated pins. Care should also
be taken to limit the serial inductance of the board to less than 5 nH.
NOTE
The voltage regulator output cannot be used to drive external circuits. Output pins are to be
used only for decoupling capacitance.
VDD_LV_COR must be generated using internal regulator and external NPN transistor. It is
not possible to provide VDD_LV_COR through external regulator.
For the MPC5604P microcontroller, 10 F should be placed between each of the three VDD_LV_CORx/VSS_LV_CORx supply pairs
and also between the VDD_LV_REGCOR/VSS_LV_REGCOR pair. Additionally, 40 F should be placed between the
VDD_HV_REG/VSS_HV_REG pins.
VDD = 3.0 V to 3.6 V / 4.5 V to 5.5 V, TA = –40 to 125 °C, unless otherwise specified.
Table 12. EMI testing specifications
Symbol
Parameter
Conditions
Clocks
Frequency
Level
(Max)
Unit
VEME Radiated emissions Device configuration, test
conditions and EM testing per
standard IEC61967-2
Supply voltage = 5 V DC
Ambient temperature = 25 °C
Worst-case orientation
fOSC 8MHz
fCPU 64 MHz
No PLL frequency
modulation
150 kHz–150 MHz
16
dBV
150–1000 MHz
15
IEC Level
M
fOSC 8MHz
fCPU 64 MHz
1% PLL frequency
modulation
150 kHz–150 MHz
15
dBV
150–1000 MHz
14
IEC Level
M
Table 13. ESD ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
Parameter
Conditions
Value
Unit
VESD(HBM)
SR Electrostatic discharge (Human Body Model)
2000
V
VESD(CDM)
SR Electrostatic discharge (Charged Device Model)
750 (corners)
V
500 (other)
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