1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Enhancement
MAXIMUM RATINGS
Rating
Symbol
MPF930
MPF960
MPF990
Unit
Drain–Source Voltage
VDS
VDG
35
60
90
Vdc
Drain–Gate Voltage
35
60
90
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp
≤
50
μ
s)
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
2.0
3.0
Adc
Total Device Dissipation
@ TA = 25
°
C
Derate above 25
°
C
PD
1.0
8.0
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to 150
°
C
Thermal Resistance
θ
JA
125
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
μ
Adc)
MPF930
MPF960
MPF990
V(BR)DSX
35
60
90
—
—
—
—
—
—
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IGSS
—
—
50
nAdc
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
IDSS
—
—
10
μ
Adc
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
—
3.5
Vdc
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
(ID = 1.0 Adc)
(ID = 2.0 Adc)
VDS(on)
—
—
—
—
—
—
—
—
—
0.4
0.6
0.6
0.9
1.2
1.2
2.2
2.8
2.8
0.7
0.8
1.2
1.4
1.7
2.4
3.0
3.5
4.8
Vdc
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
Order this document
by MPF930/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
1
23
3 DRAIN
1 SOURCE
2
GATE
REV 2