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参数资料
| 型号： | MPS3638A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Switching Transistor(PNP Silicon) |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 215K |
| 代理商： | MPS3638A |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VCBO
VEBO
IC
PD
–25
Vdc
Collector–Emitter Voltage
–25
Vdc
Collector–Base Voltage
–25
Vdc
Emitter–Base Voltage
–4.0
Vdc
Collector Current — Continuous
–500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 Adc, VBE = 0)
Collector–Emitter Sustaining Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CES
–25
—
Vdc
VCEO(sus)
–25
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
V(BR)CBO
–25
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65
°
C)
ICES
—
—
–0.035
–2.0
Adc
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
IEBO
—
–35
nA
Base Current
(VCE = –15 Vdc, VBE = 0)
IB
—
–0.035
Adc
1. RJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Order this document
by MPS3638A/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces MPS3638/D)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS3638AG | 功能描述:两极晶体管 - BJT 500mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3639 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS |
| MPS3640 | 制造商:Freescale Semiconductor 功能描述: 制造商:FRESCL 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 |
| MPS3642C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| MPS3646 | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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