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参数资料
| 型号： | MPS3638A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Switching Transistor(PNP Silicon) |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 215K |
| 代理商： | MPS3638A |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(2)
Symbol
Min
Max
Unit
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –300 mAdc, VCE = –2.0 Vdc)
hFE
80
100
100
20
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
VCE(sat)
—
—
–0.25
–1.0
Vdc
Base–Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(sat)
—
–0.80
–1.1
–2.0
Vdc
Current–Gain — Bandwidth Product
(VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz)
fT
150
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
10
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
25
pF
Input Impedance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hie
—
2000
k
Voltage Feedback Ratio
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hre
—
15
X 10–4
Small–Signal Current Gain
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hfe
100
—
—
Output Admittance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
hoe
—
1.2
mmhos
Delay Time
(VCC= –10 Vdc IC= –300 mAdc IB1= –30 mAdc)
(VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc)
td
tr
ts
tf
—
20
ns
Rise Time
—
70
ns
Storage Time
(VCC = –10 Vdc, IC = –300 mAdc,
(CC
,C
IB1 = –30 mAdc, IB2 = –30 mAdc)
—
140
ns
Fall Time
—
70
ns
Turn–On Time
(IC = –300 mAdc, IB1 = –30 mAdc)
(IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc)
ton
toff
—
75
ns
Turn–Off Time
—
170
ns
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
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相关代理商/技术参数 |
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|---|---|
| MPS3638AG | 功能描述:两极晶体管 - BJT 500mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3639 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS |
| MPS3640 | 制造商:Freescale Semiconductor 功能描述: 制造商:FRESCL 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 |
| MPS3642C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| MPS3646 | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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