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参数资料
| 型号： | MPS3646 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Switching Trasnistor(NPN Silicon) |
| 中文描述： | 300 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 268K |
| 代理商： | MPS3646 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 0.5 Vdc)
(IC = 300 mA, VCE = 1.0 Vdc)
hFE
30
25
15
120
—
—
—
Collector–Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mAdc)
(IC = 30 mA, IB = 3.0 mA, TA = 65
°
C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mA)
VCE(sat)
—
—
—
—
0.2
0.28
0.5
0.3
Vdc
Base–Emitter Saturation Voltage
VBE(sat)
0.73
—
—
0.95
1.2
1.7
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
350
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
5.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
—
9.0
pF
Turn–On Time
(Figure 1)
ton
td
tr
toff
tf
—
18
ns
Delay Time
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)
—
10
ns
Rise Time
—
15
ns
Turn–Off Time
(Figure 1)
—
28
ns
Fall Time
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)
—
15
ns
Storage Time
(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc)
(Figure 2)
ts
—
18
ns
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Test
Condition
IC
mA
10
VCC
V
3
A
B
C
10
100
10
10
RS
330
50
560
RC
270
960
96
CS(max)
pF
4
4
12
VBE(off)
V
–1.5
—
–2.0
V1
V
10.55
—
6.35
V2
V
–4.15
–4.65
–4.65
V3
V
10.70
6.55
6.55
Figure 1. Switching Time Equivalent Test Circuit
VCC
RB
RC
CS
V1
V3
0
V2
0
VEB(off)
<2 ns
<2 ns
ton
t1
toff
t1
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS3646C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| MPS3646G | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRA | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRAG | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRM | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 15V 0.3A 3-Pin TO-92 Tape and Ammo |
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